Energy Minimization by Nanotechnology Structures based on CNTFET GaAs

Authors

  • Anshu Chandola

DOI:

https://doi.org/10.37591/jowet.v6i3.2276

Abstract

Abstract

In this study, we will compare the carbon nanotube-based field effect transistors with the conventional MOSFET (metal–semiconductor field-effect transistor) on the basics of various parameters like effect of temperature, its channel length, its capacitance, and its operating frequency. The purpose of this comparison between these two transistors is that due to the reason of scaling down of size of the transistor in nanometers so that more components can be fabricated in a single chip with less power dissipation.

Keywords: Conventional, capacitance, carbon, fabricated

Cite this Article

Anshu Chandola. Energy Minimization by Nanotechnology Structures based on CNTFET GaAs. Journal of Web Engineering & Technology. 2019; 6(3): 23–28p.


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Published

2019-11-14

Issue

Vol. 6 No. 3 (2019)

Section

Research Articles

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